|本期目录/Table of Contents|

[1]米保全,李许军,王春霞.SiC MOSFET在三相PWM整流器中的研究与应用[J].工业仪表与自动化装置,2020,(06):75-79.[doi:1000-0682(2020)06-0000-00]
 MI Baoquan,LI Xujun,WANG Chunxia.Research and application of the SiC MOSFET in three-phase PWM rectifier[J].Industrial Instrumentation & Automation,2020,(06):75-79.[doi:1000-0682(2020)06-0000-00]
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SiC MOSFET在三相PWM整流器中的研究与应用

《工业仪表与自动化装置》[ISSN:1000-0682/CN:61-1121/TH]

卷:
期数:
2020年06期
页码:
75-79
栏目:
出版日期:
2020-12-15

文章信息/Info

Title:
Research and application of the SiC MOSFET in three-phase PWM rectifier
作者:
米保全李许军王春霞
1.甘肃机电职业技术学院,甘肃 天水741001;
2.兰州理工大学 计算机与通信学院,兰州 730050
Author(s):
MI Baoquan1LI Xujun1 WANG Chunxia2
1. Gansu Mechanical & Electrical Vocational and College,Gansu Tianshui 741001,China;
2.College of Computer and Communications, Lanzhou University of Technology, Lanzhou 730050,China
关键词:
SiC MOSFET三相PWM整流器高频过流
Keywords:
SiC MOSFETthree-phase PWM rectifierhigh frequencyovercurrent
分类号:
TM13
DOI:
1000-0682(2020)06-0000-00
文献标志码:
A
摘要:
新一代宽禁带半导体SiC器件相比传统Si器件在耐压、高频、高温等性能方面有很大优势。该文基于SiC MOSFET三相PWM整流器设计了SiC MOSFET的驱动电路;SiC MOSFET在三相PWM整流器的高频化设计,可以使交流侧的输入电感量进一步减小,这有利于提高电源的功率密度,但也容易导致整流器启动时刻出现过流问题。针对这一问题,提出了启动时刻通过合理设计电压电流双环控制中电压环的输出值作为限幅值的方法来抑制启动过流,并通过实验验证了该驱动电路满足设计要求和启动过流抑制方法的有效性。
Abstract:
Compared with traditional Si devices, the new generation wide band gap semiconductor SiC devices have greater advantages in voltage, high frequency,high temperature and other performance. This paper based on the three-phase PWM rectifier of SiC MOSFET,the driving circuit of SiC MOSFET is designed.The high frequency design of SiC MOSFET in the three-phase PWM rectifier can further reduce the input inductance of the AC side,which is conducive to improving the power density of the power supply,but it will also lead to the over-current problem at the start-up time of the rectifier.In order to solve this problem,the method of limiting the amplitude of the voltage loop in the voltage current double loop control is proposed to restrain the start-up overcurrent,the driving circuit meets the design requirements and the effectiveness of the start-up overcurrent suppression method is verified by experiments.

参考文献/References:

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[2] SARNAGO H, LUCIA ?, BURDIO J M.Interleaved resonant boost inverter featuring SiC module for high-performance induction heating[J].IEEE Transactions on Power Electronics, 2017,32 (2):1018-1029.
[3] FRIEDLI T, HARTMANN M, KOLAR J W.The essence of three- phase PFC rectifier systems-part II[J]. IEEE Transactions on Power Electronics,2014,29 (2):543-560.
[4] 田洋天,肖岚,郑昕昕,等.三相PWM整流器启动冲击的抑制[J].电力电子技术,2013,47 (05): 1-3.
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[8] 龚涛.一种三相电压型PWM整流器起动过流抑制方法[J].电器与能效管理技术,2019(09):60-64+70.
[9] 王恩德,黄声华.三相电压型PWM整流的新型双闭环控制策略[J].中国电机工程学报,2012,32 (15):24-30.
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备注/Memo

备注/Memo:
收稿日期:2020-06-28
基金项目:
2019年甘肃省高校创新基金项目(2019A-235);
2019年天水市科技计划支撑项目(2019-GXJSK-1338)
作者简介:
米保全(1966),男,甘肃天水人,本科,教授,主要研究方向为计算机应用技术。
更新日期/Last Update: 1900-01-01